Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: MOSpipeDescription: VISHAY SUD50P04-13L-E3. Field effect transistor, MOSFET, P-channel, -40V, -50A, TO-252-31061 -
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Category: Schottky diodeDescription: ON Semiconductor Diode RHRD660S9A_F085 switch, Io=6A, Velev=600V, 35ns, 3-pin DPAK (TO-252) package7948 -
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Category: MOSpipeDescription: NChannel 150-V (D-S) 175C MOSFET N-Channel 150-V (D-S) 175C MOSFET5704 -
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Category: MOSpipeDescription: ON Semiconductor UniFET Series Si N-channel MOSFET FDD4N60NZ, 3.4 A, Vds=600 V, 3-pin DPAK (TO-252) package2563 -
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Category: MOSpipeDescription: PowerTrench® N 通道 MOSFET，高达 9.9A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (<250V) 类型。 先进的硅技术提供更小的芯片尺寸，其整合到多种工业标准和耐热增强型封装中。 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。2033 -
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Category: MOSpipeDescription: TOSHIBA TK3P50D 晶体管, MOSFET, 功率, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 2.4 V9527 -
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Category: MOSpipeDescription: VISHAY SUD19P06-60-GE3 晶体管, MOSFET, P沟道, -18.3 A, -60 V, 0.048 ohm, -10 V, -3 V6857 -
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Category: Bipolar transistorDescription: ON SEMICONDUCTOR NJVNJD2873T4G Bipolar (BJT) Single Transistor, AEC-Q101, NPN, 50 V, 65 MHz, 15 W, 2 A, 40 hFE 新2295 -
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Category: MOSpipeDescription: INFINEON IPD60R385CP 功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V5132 -
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Category: MOSpipeDescription: ON Semiconductor UniFET 系列 Si N沟道 MOSFET FDD18N20LZ, 16 A, Vds=200 V, 3引脚 DPAK (TO-252)封装3287 -
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Category: MOSpipeDescription: ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDD1600N10ALZD, 6.8 A, Vds=100 V, 5引脚 DPAK (TO-252)封装7984 -
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Category: Schottky diodeDescription: 肖特基势垒二极管，3A 至 9A，ON Semiconductor ### 标准 带 NSV-、SBR- 或 S- 前缀的制造商部件号符合 AEC-Q101 汽车等级。 ### 二极管和整流器，ON Semiconductor1943
